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| Philips Semiconductors Product specification Triacs logic level GENERAL DESCRIPTION Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT131 series QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BT131Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500 500 1 16 600 600 1 16 800 800 1 16 V A A PINNING - TO92 PIN 1 2 3 DESCRIPTION main terminal 2 PIN CONFIGURATION SYMBOL T2 gate main terminal 1 321 T1 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tlead 51 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 1.5 A; IG = 0.2 A; dIG/dt = 0.2 A/s T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 1 16 17.6 1.28 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/s A/s A/s A/s A V W W C C I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/s. December 2000 1 Rev 2.000 Philips Semiconductors Product specification Triacs logic level THERMAL RESISTANCES SYMBOL Rth j-lead Rth j-a PARAMETER Thermal resistance junction to lead Thermal resistance junction to ambient CONDITIONS full cycle half cycle pcb mounted;lead length = 4mm MIN. - BT131 series TYP. 150 MAX. 60 80 - UNIT K/W K/W K/W STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ T2+ G+ T2+ GT2- GT2- G+ MIN. 0.2 TYP. 0.4 1.3 1.4 3.8 1.2 4.0 1.0 2.5 1.3 1.2 0.7 0.3 0.1 MAX. 3 3 3 7 5 8 5 8 5 1.5 1.5 0.5 UNIT mA mA mA mA mA mA mA mA mA V V V mA IL Latching current VD = 12 V; IGT = 0.1 A IH VT VGT ID Holding current On-state voltage Gate trigger voltage Off-state leakage current VD = 12 V; IGT = 0.1 A IT = 2.0 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL dVD/dt tgt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; RGK = 1 k ITM = 1.5 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s MIN. 5 TYP. 15 2 MAX. UNIT V/s s December 2000 2 Rev 2.000 Philips Semiconductors Product specification Triacs logic level BT131 series 1.4 1.2 Ptot / W Tsp(max) / C 104 107 1.2 1 0.8 IT(RMS) / A 108 C = 180 1 1 0.8 0.6 0.4 0.2 0 120 90 60 30 110 113 0.6 116 119 122 125 1.2 0.4 0.2 0 -50 0 0.2 0.4 0.6 0.8 IT(RMS) / A 1 0 50 Tsp / C 100 150 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle. Fig.4. Maximum permissible rms current IT(RMS) , versus lead temperature Tlead. IT(RMS) / A 1000 ITSM / A BT132D 3 ITSM IT T 2.5 time Tj initial = 25 C max 100 dI T/dt limit T2- G+ quadrant 10 10us 2.0 1.5 1 0.5 0 0.01 100us 1ms T/s 10ms 100ms 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms. ITSM / A IT T 8 6 4 2 0 ITSM time Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tlead 51C. VGT(Tj) VGT(25 C) 12 10 1.6 1.4 1.2 1 0.8 0.6 Tj initial = 25 C max 1 10 100 Number of cycles at 50Hz 1000 0.4 -50 0 50 Tj / C 100 150 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj. December 2000 3 Rev 2.000 Philips Semiconductors Product specification Triacs logic level BT131 series 3 2.5 2 1.5 1 0.5 IGT(Tj) IGT(25 C) T2+ G+ T2+ GT2- GT2- G+ 2 IT / A Tj = 125 C Tj = 25 C 1.5 Vo = 1.0 V Rs = 0.21 Ohms typ max 1 0.5 0 -50 0 0 50 Tj / C 100 150 0 0.5 1 VT / V 1.5 2 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and maximum on-state characteristic. 100 Zth j-sp (K/W) 3 2.5 2 10 unidirectional 1 bidirectional 1.5 1 0.5 0 -50 0.01 10us 0.1ms 1ms 10ms tp / s 0.1s 1s P D tp 0.1 t 0 50 Tj / C 100 150 10s Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj. IH(Tj) IH(25C) Fig.11. Transient thermal impedance Zth j-lead, versus pulse width tp. dVD/dt (V/us) 1000 3 2.5 2 1.5 1 0.5 100 10 0 -50 0 50 Tj / C 100 150 1 0 50 Tj / C 100 150 Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj. Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. December 2000 4 Rev 2.000 Philips Semiconductors Product specification Triacs logic level MECHANICAL DATA Plastic single-ended leaded (through hole) package; 3 leads BT131 series SOT54 c E d A L b 1 D 2 e1 e 3 b1 L1 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 5.2 5.0 b 0.48 0.40 b1 0.66 0.56 c 0.45 0.40 D 4.8 4.4 d 1.7 1.4 E 4.2 3.6 e 2.54 e1 1.27 L 14.5 12.7 L1(1) 2.5 Note 1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. OUTLINE VERSION SOT54 REFERENCES IEC JEDEC TO-92 EIAJ SC-43 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Fig.13. TO92 ; plastic envelope; Net Mass: 0.2 g Notes 1. Epoxy meets UL94 V0 at 1/8". December 2000 5 Rev 2.000 Philips Semiconductors Product specification Triacs logic level DEFINITIONS Data sheet status Objective specification Product specification Limiting values BT131 series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 2000 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. December 2000 6 Rev 2.000 |
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